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1.
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8 p, 1.5 MB |
Electron cooling in graphene enhanced by plasmon-hydron resonance
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Yu, Xiaoqing (Max Planck Institute for Polymer Research) ;
Principi, Alessandro (University of Manchester. School of Physics and Astronomy) ;
Tielrooij, Klaas-Jan (Institut Català de Nanociència i Nanotecnologia) ;
Bonn, Mischa (Max Planck Institute for Polymer Research) ;
Kavokine, Nikita (Flatiron Institute. Center for Computational Quantum Physics)
Evidence is accumulating for the crucial role of a solid's free electrons in the dynamics of solid-liquid interfaces. Liquids induce electronic polarization and drive electric currents as they flow; electronic excitations, in turn, participate in hydrodynamic friction. [...]
2023 -  10.1038/s41565-023-01421-3
Nature Nanotechnology, Vol. 18, Issue 8 (August 2023) , p. 898-904
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2.
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39 p, 1.5 MB |
Two-dimensional materials prospects for non-volatile spintronic memories
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Yang, Hyunsoo (National University of Singapore. Department of Electrical and Computer Engineering) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Chshiev, Mairbek (SPINtronique et TEchnologie des Composants) ;
Couet, Sébastien (Imec) ;
Dieny, Bernard (SPINtronique et TEchnologie des Composants) ;
Dlubak, Bruno (Unité Mixte de Physique. CNRS. Thales. Université Paris-Saclay) ;
Fert, Albert (Université Paris-Saclay. Unité Mixte de Physique) ;
Garello, Kevin (SPINtronique et TEchnologie des Composants) ;
Jamet, Matthieu (SPINtronique et TEchnologie des Composants) ;
Jeong, Dae-Eun (Samsung Electronics Co.) ;
Lee, Kangho (Samsung Electronics Co.) ;
Lee, Taeyoung (GLOBALFOUNDRIES Singapore Pte. Ltd.) ;
Martin, Marie-Blandine (Université Paris-Saclay. Unité Mixte de Physique) ;
Kar, Gouri Sankar (Imec) ;
Sénéor, Pierre (Université Paris-Saclay. Unité Mixte de Physique) ;
Shin, Hyeon-Jin (Samsung Advanced Institute of Technology) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. [...]
2022 - 10.1038/s41586-022-04768-0
Nature, Vol. 606, issue 7915 (June 2022) , p. 663-673
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3.
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11 p, 1.5 MB |
A smartphone sensor-based digital outcome assessment of multiple sclerosis
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Montalban, Xavier (Hospital Universitari Vall d'Hebron) ;
Graves, Jennifer (University of California San Diego) ;
Midaglia, Luciana (Hospital Universitari Vall d'Hebron) ;
Mulero, P. (Hospital Universitari Vall d'Hebron) ;
Julian, Laura (Genentech (Estats Units d'Amèrica)) ;
Baker, Michael (F. Hoffmann-La Roche (Suïssa)) ;
Schadrack, Jan (F. Hoffmann-La Roche (Suïssa)) ;
Gossens, Christian (F. Hoffmann-La Roche (Suïssa)) ;
Ganzetti, Marco (F. Hoffmann-La Roche (Suïssa)) ;
Scotland, Alf (F. Hoffmann-La Roche (Suïssa)) ;
Lipsmeier, Florian (F. Hoffmann-La Roche (Suïssa)) ;
van Beek, Johan (F. Hoffmann-La Roche (Suïssa)) ;
Bernasconi, Corrado (F. Hoffmann-La Roche (Suïssa)) ;
Belachew, Shibeshih (F. Hoffmann-La Roche (Suïssa)) ;
Lindemann, Michael (F. Hoffmann-La Roche (Suïssa)) ;
Hauser, Stephen L. (University of California)
Sensor-based monitoring tools fill a critical gap in multiple sclerosis (MS) research and clinical care. The aim of this study is to assess performance characteristics of the Floodlight Proof-of-Concept (PoC) app. [...]
2021 - 10.1177/13524585211028561
Multiple sclerosis, Vol. 28 (july 2021) , p. 654-664
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4.
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11 p, 5.7 MB |
Investigation on the conductive filament growth dynamics in resistive switching memory via a Universal Monte Carlo Simulator
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Li, Yu (Chinese Academy of Sciences. Institute of Microelectronics (Beijing, Xina)) ;
Zhang, Meiyun (Jiangsu National Synergetic Innovation Center for Advanced Materials) ;
Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing, Xina)) ;
Teng, Jiao (University of Science and Technology (Beijing, Xina)) ;
Liu, Qi (Jiangsu National Synergetic Innovation Center for Advanced Materials) ;
Lv, Hangbing (Jiangsu National Synergetic Innovation Center for Advanced Materials) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Liu, Ming (Jiangsu National Synergetic Innovation Center for Advanced Materials)
In resistive random access memories, modeling conductive filament growing dynamics is important to understand the switching mechanism and variability. In this paper, a universal Monte Carlo simulator is developed based on a cell switching model and a tunneling-based transport model. [...]
2017 - 10.1038/s41598-017-11165-5
Scientific reports, Vol. 7 (Sep. 2017) , art. 11204
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5.
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11 p, 2.5 MB |
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO RRAM devices
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Grossi, Alessandro (Università degli Studi di Ferrara. Dipartimento di Ingegneria) ;
Perez, Eduardo (IHP Im Technologiepark) ;
Zambelli, Cristian (Università degli Studi di Ferrara. Dipartimento di Ingegneria) ;
Olivo, Piero (Università degli Studi di Ferrara. Dipartimento di Ingegneria) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Roelofs, Robin (ASM Kapeldreef) ;
Woodruff, Jacob (E University Dr. ASM America) ;
Raisanen, Petri (E University Dr. ASM America) ;
Li, Wei (E University Dr. ASM America) ;
Givens, Michael (E University Dr. ASM America) ;
Costina, Ioan (IHP Im Technologiepark) ;
Schubert, Markus Andreas (IHP Im Technologiepark) ;
Wenger, Christian (Brandenburg Medical School Theodor Fontane)
The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. [...]
2018 - 10.1038/s41598-018-29548-7
Scientific reports, Vol. 8 (July 2018) , art. 11160
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6.
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7.
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6 p, 706.8 KB |
Power-efficient noise-induced reduction of reram cell's temporal variability effects
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Ntinas, Vasileios (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ;
Rubio, Antonio 1954- (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ;
Sirakoulis, Georgios Ch (Democritus University of Thrace. Department of Electrical and Computer Engineering) ;
Salvador Aguilera, Emili (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Pedro, Marta (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Resistive Random Access Memory (ReRAM) is a promising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commercialization, mainly owing to the fact that the high fabrication variations and the stochastic switching of the manufactured ReRAM devices cause high Bit Error Rate (BER). [...]
2021 - 10.1109/TCSII.2020.3026950
IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 68, issue 4 (April 2021) , p. 1378-1382
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8.
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9.
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32 p, 2.7 MB |
Ultralow-dielectric-constant amorphous boron nitride
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Hong, Seokmo (Ulsan National Institute of Science and Technology. Department of Chemistry) ;
Lee, Chang-Seok (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ;
Lee, Min-Hyun (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ;
Lee, Yeongdong (Ulsan National Institute of Science and Technology. School of Materials Science and Engineering) ;
Ma, Kyung Yeol (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ;
Kim, Gwangwoo (Ulsan National Institute of Science and Technology. Department of Chemistry) ;
Yoon, Seong In (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ;
Ihm, Kyuwook Ihm (Pohang Accelerator Laboratory) ;
Kim, Ki-Jeong (Pohang Accelerator Laboratory) ;
Shin, Tae Joo (Ulsan National Institute of Science and Technology. Department of Chemistry) ;
Kim, Sang Won (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ;
Jeon, Eun-chae (University of Ulsan. School of Materials Science and Engineering) ;
Jeon, Hansol (Ulsan National Institute of Science and Technology. School of Materials Science and Engineering) ;
Kim, Ju-Young (Ulsan National Institute of Science and TechnologY. School of Materials Science and Engineering) ;
Lee, Hyung-Ik (Samsung Advanced Institute of Technology. Analytical Engineering Group) ;
Lee, Zonghoon (Center for Multidimensional Carbon Materials (Ulsan, Corea del Nord)) ;
Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Chhowalla, Manish (University of Cambridge. Department of Materials Science & Metallurgy) ;
Shin, Hyeon-Jin (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ;
Shin, Hyeon Suk (Ulsan National Institute of Science and Technology. Low-Dimensional Carbon Materials Center)
Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. [...]
2020 - 10.1038/s41586-020-2375-9
Nature, Vol. 582, issue 7813 (June 2020) , p. 511-514
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10.
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32 p, 3.0 MB |
Recent advances in fiber-shaped and planar-shaped textile solar cells
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Hatamvand, Mohammad (Fudan University. Center of Micro-Nano System) ;
Kamrani, Ehsan (Wellman Center for Photomedicine) ;
Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia) ;
Madsen, Morten. (Mads Clausen Institute) ;
Patil, Bhushan R. (Mads Clausen Institute) ;
Vivo, Paola (Tampere University. Faculty of Engineering and Natural Sciences) ;
Mehmood, Muhammad Shahid (Fudan University. Center of Micro-Nano System) ;
Numan, Arshid (Graphene & Sunway University. School of Science and Technology) ;
Ahmed, Irfan (Government Postgraduate College. (Higher Education Department-HED) Khyber Pakhtunkhwa. Department of Physics) ;
Zhan, Yiqiang (Fudan University. Center of Micro-Nano System)
During the last few years, textile solar cells with planar and fiber-shaped configurations have attracted enormous research interest. These flexible-type solar cells have a huge potential applicability in self-powered and battery-less electronics, which will impact many sectors, and particularly the Internet of Things. [...]
2020 - 10.1016/j.nanoen.2020.104609
Nano Energy, Vol. 71 (May 2020) , art. 104609
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