A study on free-standing 3C-SiC bipolar power diodes
Li, Fan (University of Warwick. School of Engineering)
Renz, Arne Benjamin (University of Warwick. School of Engineering)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Shah, Vishal (University of Warwick. School of Engineering)
Gammon, Peter (University of Warwick. School of Engineering)
La Via, Francesco (Consiglio Nazionale delle Ricerche. Instituto per la Microelettronica e Microsistemi)
Jennings, Mike (Swansea University. College of Engineering)
Mawby, Philip (University of Warwick. School of Engineering)

Data:	2021
Resum:	A low p-n built-in potential (1. 75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterization of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ∼10 Ω cm. The fabricated PiN diode has a low forward voltage drop of 2. 7 V at 1000 A/cm, and the on-off ratio at ±3 V is as high as 10. An ideality factor of 1. 83-1. 99 was achieved, and a blocking voltage of ∼110 V was observed using a single-zone junction termination design.
Ajuts:	European Commission 720827
Nota:	This AIP article is published under license by AIP: https://publishing.aip.org/wp-content/uploads/2019/10/AIPP-Author-License.pdf
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Built-in potential ; Fabrication and characterizations ; Forward voltage drops ; High defect densities ; Junction termination ; Lateral structures ; Processing temperature ; Specific contact resistances
Publicat a:	Applied physics letters, Vol. 118, issue 24 (June 2021) , art. 242101, ISSN 1077-3118

DOI: 10.1063/5.0054433

6 p, 1.6 MB

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