guest ::
login
UAB Digital Repository of Documents
Search
Submit
Help
Personalize
Your alerts
Your baskets
Your searches
Library Service
About DDD
Català
English
Español
Home
>
Research literature
>
Doctoral theses
>
CAFM nanoscale electrical properties and reliability of HfO₂ based gate dielectrics in electron devices :
>
Comments
Information
Discussion (0)
Usage statistics
CAFM nanoscale electrical properties and reliability of HfO₂ based gate dielectrics in electron devices : impact of the polycrystallization and resistive switching
-
Iglesias Santiso, Vanessa
;
Porti i Pujal, Marc,
dir. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Universitat Autònoma de Barcelona.
Departament d'Enginyeria Electrònica
Comments (0)
|
Reviews
(0)
Start a discussion about any aspect of this document.
Subscribe
to this discussion. You will then receive all new comments by email.
Add comment
Once logged in, authorized users can also attach files.
Note: you have not
defined your nickname
.
N/D
will be displayed as the author of this comment.
You can use some HTML tags: <a href>, <strong>, <blockquote>, <br />, <p>, <em>, <ul>, <li>, <b>, <i>
Send me an email when a new comment is posted
Similar records