Web of Science: 19 cites, Scopus: 20 cites, Google Scholar: cites,
Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Tsurumaki-Fukuchi, Atsushi (National Institute of Advanced Industrial Science and Technology (Ibaraki, Japó))
Yamada, Hiroyuki (National Institute of Advanced Industrial Science and Technology (Ibaraki, Japó))
Sawa, Akihito (National Institute of Advanced Industrial Science and Technology (Ibaraki, Japó))
American Institute of Physics

Data: 2013
Resum: We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1−δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1−δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió publicada
Matèria: Ferroelectric elements ; Fixed capacitors ; Static stores
Publicat a: Applied physics letters, Vol. 103, Issue 26 (December 2013) , p. 263502/1-263502/4, ISSN 1077-3118

DOI: 10.1063/1.4855155


5 p, 1.3 MB

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