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Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions
Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament de Física)
American Physical Society

Date: 1992
Abstract: The modification of HF‐etched silicon (100) surface with a scanning tunneling microscope(STM) operated in air is studied for the first time in samples subjected to the standard HF etching without the follow‐up rinsing in H2O. The modifications are produced in air under normal STM imaging conditions (V t =−1. 4 V and I t =2 nA). The simultaneous acquisition of topographical, current image tunneling spectroscopy and local barrier‐height images clearly shows that the nature of the modification is not only topographical but also chemical. The features produced with a resolution better than 25 nm are attributed to a tip‐induced oxidation enhanced by the presence of fluorine on the surface.
Rights: Tots els drets reservats.
Language: Anglès.
Document: article ; recerca ; publishedVersion
Subject: Scanning tunneling microscopy ; Silicon ; Surface oxidation ; Surface treatments ; Etching ; Nonlinear acoustics ; Scanning tunneling microscopes ; Tunneling ; Water vapor
Published in: Applied Physics Letters, Vol. 61, Issue 4 (July 1992) , p. 462-464, ISSN 1077-3118

DOI: 10.1063/1.107885


4 p, 630.0 KB

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Articles > Research articles
Articles > Published articles

 Record created 2014-02-28, last modified 2019-02-03



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