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| Home > Articles > Published articles > Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions |
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) (Universitat Autònoma de Barcelona. Departament de Física)| Date: | 1992 |
| Abstract: | The modification of HF-etched silicon (100) surface with a scanning tunneling microscope(STM) operated in air is studied for the first time in samples subjected to the standard HF etching without the follow-up rinsing in H2O. The modifications are produced in air under normal STM imaging conditions (V t =−1. 4 V and I t =2 nA). The simultaneous acquisition of topographical, current image tunneling spectroscopy and local barrier-height images clearly shows that the nature of the modification is not only topographical but also chemical. The features produced with a resolution better than 25 nm are attributed to a tip-induced oxidation enhanced by the presence of fluorine on the surface. |
| Rights: | Tots els drets reservats.  |
| Language: | Anglès |
| Document: | Article ; recerca ; Versió publicada |
| Subject: | Scanning tunneling microscopy ; Silicon ; Surface oxidation ; Surface treatments ; Etching ; Nonlinear acoustics ; Scanning tunneling microscopes ; Tunneling ; Water vapor |
| Published in: | Applied physics letters, Vol. 61, Issue 4 (July 1992) , p. 462-464, ISSN 1077-3118 |
