Home > Articles > Published articles > Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices |
Date: | 2015 |
Abstract: | In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. After data acquisition, the advanced Weighted Time Lag (WTL) method is employed to accurately identify the contribution of multiple electrically active defects in multilevel RTN signals. Finally, the internal dynamics of trapping and de-trapping processes through the defects close to the filamentary path and its dependence on voltage and time are analyzed. |
Grants: | Ministerio de Economía y Competitividad TEC2011-27292-C02-02 Ministerio de Economía y Competitividad TEC2013-45638-C3-1-R Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384 |
Rights: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades. |
Language: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Subject: | Conductive filament ; HfO2 ; Ni ; Resistive random access memory ; RRAM ; Random telegraph noise ; RTN ; Variability |
Published in: | Microelectronic engineering, Vol. 147, no. 1 (Nov. 2015) , p. 59-62, ISSN 0167-9317 |
Post-print 4 p, 446.5 KB |