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Reversible dielectric breakdown in ultra Hf based high-k stacks under current limited stresses
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martín Martínez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date: 2009
Abstract: The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the Resistive Switching phenomenon observed in MIM structures for memory applications are discussed.
Note: Número d'acord de subvenció MICINN/TEC2007-61294
Note: Número d'acord de subvenció AGAUR/2005/SGR-1224
Rights: Tots els drets reservats
Language: Anglès.
Document: article ; recerca ; submittedVersion
Subject: Dielectric breakdown ; Resistive switching ; High-k reliability ; CMOS process
Published in: Microelectronics reliability, Vol. 49, Issue 9-11 (2009) , p. 1024-1028, ISSN 0026-2714

DOI: 10.1016/j.microrel.2009.06.029


Pre-print
11 p, 963.5 KB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (scientific output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles

 Record created 2015-09-28, last modified 2019-02-03



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