Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Tsurumaki-Fukuchi, A. (National Institute of Advanced Industrial Science and Technology (AIST))
Blasco Solans, Juli (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Yamada, Hiroyuki (National Institute of Advanced Industrial Science and Technology (AIST))
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Sawa, A. (National Institute of Advanced Industrial Science and Technology (AIST))

Data:	2014
Resum:	The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO3 polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0. 07 eV) than previously reported (>0. 5 eV). It is also shown that the p-type semiconducting nature of BiFeO3 can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4. 7 V and 1. 9 V) exhibited by our devices.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Schottky barriers ; Polarization ; Transport properties ; Gold ; Ferroelectric thin films
Publicat a:	Applied physics letters, Vol. 105 (August 2014) , p. 82904-01/82904-04, ISSN 1077-3118

DOI: 10.1063/1.4894116

5 p, 1.3 MB

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