NH₃ molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations
Miranda, Álvaro (Institut de Ciència de Materials de Barcelona)
Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona)
Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)

Date:	2012
Abstract:	The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). We show that molecular-based ex-situ doping, where NH₃ is adsorbed at the sidewall of the SiNW, can be an alternative path to n-type doping. By means of first-principle electronic structure calculations, we show that NH₃ is a shallow donor regardless of the growth orientation of the SiNWs. Also, we discuss quantum confinement and its relation with the depth of the NH₃ doping state, showing that the widening of the bandgap makes the molecular donor level deeper, thus more difficult to activate.
Grants:	Ministerio de Ciencia e Innovación TEC2009-06986 Ministerio de Economía y Competitividad FIS2009-12721-C04-03 Ministerio de Ciencia e Innovación CSD2007-00041
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Silicon nanowires ; Ammonia ; Molecular doping ; DFT ; Electronic properties ; Gas sensing
Published in:	Nanoscale Research Letters, Vol. 7 (June 2012) , art. 308, ISSN 1931-7573

DOI: 10.1186/1556-276X-7-308
PMID: 22709657

7 p, 4.4 MB

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