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Results overview: Found 6 records in 0.02 seconds.
Articles, 6 records found
Articles 6 records found  
1.
14 p, 417.1 KB Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantation / Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona) ; Sansa Perna, Marc (Institut de Microelectrònica de Barcelona) ; Gerbolés, M. (Institut de Microelectrònica de Barcelona) ; Mestres i Andreu, Narcís (Institut de Ciència de Materials de Barcelona) ; Arbiol i Cobos, Jordi (Institució Catalana de Recerca i Estudis Avançats) ; Borrisé, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona)
We present the fabrication of silicon nanowire (SiNW) mechanical resonators by a resistless process based on focused ion beam local gallium implantation, selective silicon etching and diffusive boron doping. [...]
2014 - 10.1088/0957-4484/25/13/135302
Nanotechnology, Vol. 25, issue 13 (April 2014) , art. 135302  
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2.
28 p, 1.9 MB Reduction of Thermal Conductivity in Nanowires by Combined Engineering of Crystal Phase and Isotope Disorder / Mukherjee, Samik (Polytechnique Montréal. Département de génie physique) ; Givan, Uri (Max Planck Institute of Microstructure Physics) ; Senz, Stephan (Max Planck Institute of Microstructure Physics) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Moutanabbir, Oussama (École Polytechnique de Montréal. Department of Engineering Physics)
Nanowires are a versatile platform to investigate and harness phonon and thermal transport phenomena in nanoscale systems. With this perspective, we demonstrate herein the use of crystal phase and mass disorder as effective degrees of freedom to manipulate the behavior of phonons and control the flow of local heat in silicon nanowires. [...]
2018 - 10.1021/acs.nanolett.8b00612
Nano letters, Vol. 18, Issue 5 (May 2018) , p. 3066-3075  
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3.
15 p, 4.0 MB Metamirrors Based on Arrays of Silicon Nanowires with Height Gradients / Otte Ortiz, Marinus Albertus (Institut Català de Nanociència i Nanotecnologia) ; García Martín, Antonio (Instituto de Microelectrónica de Madrid) ; Borrisé, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Sepúlveda, Borja (Institut Català de Nanociència i Nanotecnologia)
Arrays of silicon nanowires with height gradients fabricated using metal-assisted chemical etching act as tunable metamirrors enabling light focusing the reflected light in arbitrary shapes. Metamirrors with non-cylindrical nanowires can simultaneously focus the reflected light and induce strong polarization conversion effect.
2017 - 10.1002/adom.201600933
Advanced optical materials, Vol. 5, Issue 4 (February 2017) , art. 1600933  
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4.
21 p, 1.0 MB High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga / Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 - 10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874  
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5.
6 p, 1.5 MB Resonant tunnelling features in a suspended silicon nanowire single-hole transistor / Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona) ; Krali, Emiljana (Imperial College London. Department of Electrical and Electronic Engineering) ; Wang, Chen (Imperial College London. Department of Electrical and Electronic Engineering) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Jones, Mervyn E. (Imperial College London. Department of Electrical and Electronic Engineering) ; Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona) ; Durrani, Zahid A. K. (Imperial College London. Department of Electrical and Electronic Engineering) ; ALBA Laboratori de Llum de Sincrotró
Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. [...]
2015 - 10.1063/1.4936757
Applied physics letters, Vol. 107, issue 22 (Nov. 2015) , art. 223501  
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6.
7 p, 4.4 MB NH₃ molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations / Miranda, Álvaro (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). [...]
2012 - 10.1186/1556-276X-7-308
Nanoscale Research Letters, Vol. 7 (June 2012) , art. 308  
Detailed record - Creative Commons

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