Web of Science: 4 citations, Scopus: 4 citations, Google Scholar: citations
Resonant tunnelling features in a suspended silicon nanowire single-hole transistor
Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona)
Krali, Emiljana (Imperial College London. Department of Electrical and Electronic Engineering)
Wang, Chen (Imperial College London. Department of Electrical and Electronic Engineering)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Jones, Mervyn E. (Imperial College London. Department of Electrical and Electronic Engineering)
Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona)
Durrani, Zahid A. K. (Imperial College London. Department of Electrical and Electronic Engineering)
ALBA Laboratori de Llum de Sincrotró

Date: 2015
Abstract: Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole-acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.
Note: Número d'acord de subvenció EC/FP7/318804
Rights: Tots els drets reservats.
Language: Anglès.
Document: article ; recerca ; publishedVersion
Subject: Anisotropic wet etching ; Charging energies ; Coulomb diamonds ; Device application ; Electrical characteristic ; Ion beam exposure ; Silicon nanowires ; Single hole transistors
Published in: Applied physics letters, Vol. 107, issue 22 (Nov. 2015) , art. 223501, ISSN 0003-6951

DOI: 10.1063/1.4936757


6 p, 1.5 MB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (scientific output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles

 Record created 2018-12-17, last modified 2019-03-28



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