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Resonant tunnelling features in a suspended silicon nanowire single-hole transistor
Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona)
Krali, Emiljana (Imperial College London. Department of Electrical and Electronic Engineering)
Wang, Chen (Imperial College London. Department of Electrical and Electronic Engineering)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Jones, Mervyn E. (Imperial College London. Department of Electrical and Electronic Engineering)
Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona)
Durrani, Zahid A. K. (Imperial College London. Department of Electrical and Electronic Engineering)
ALBA Laboratori de Llum de Sincrotró

Fecha: 2015
Resumen: Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole-acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.
Nota: Número d'acord de subvenció EC/FP7/318804
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; publishedVersion
Materia: Anisotropic wet etching ; Charging energies ; Coulomb diamonds ; Device application ; Electrical characteristic ; Ion beam exposure ; Silicon nanowires ; Single hole transistors
Publicado en: Applied physics letters, Vol. 107, issue 22 (Nov. 2015) , art. 223501, ISSN 1077-3118

DOI: 10.1063/1.4936757

6 p, 1.5 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
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 Registro creado el 2018-12-17, última modificación el 2020-03-30

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