Results overview: Found 19 records in 0.02 seconds.
Articles, 19 records found
Articles 19 records found  1 - 10next  jump to record:
1.
19 p, 1.0 MB Passivation layers for nanostructured photoanodes : Ultra-thin oxides on InGaN nanowires / Neuderth, P. (Justus Liebig University Giessen) ; Hille, Pascal (University of Bremen. Institute of Solid State Physics) ; Schörmann, Jörg (Justus Liebig University Giessen) ; Frank, A. (Justus Liebig University Giessen) ; Reitz, C. (Karlsruhe Institute of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Coll Bau, Mariona (Institut de Ciència de Materials de Barcelona) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Marschall, R. (Justus Liebig University Giessen) ; Eickhoff, Martin (University of Bremen)
An experimental strategy for systematically assessing the influence of surface passivation layers on the photocatalytic properties of nanowire photoanodes by combining photocurrent analysis, photoluminescence spectroscopy and high resolution transmission electron microscopy with a systematic variation of sample structure and the surrounding electrolyte is demonstrated. [...]
2018 - 10.1039/c7ta08071a
Journal of materials chemistry A, Vol. 6, Issue 2 (January 2018) , p. 565-573  
2.
8 p, 2.8 MB Surface hydrogen enables subeutectic vapor-liquid-solid semiconductor nanowire growth / Sivaram, Saujen V. (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering) ; Hui, Ho Yee (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Filler, Michael A. (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering)
Vapor-liquid-solid nanowire growth below the bulk metal-semiconductor eutectic temperature is known for several systems; however, the fundamental processes that govern this behavior are poorly understood. [...]
2016 - 10.1021/acs.nanolett.6b01640
Nano letters, Vol. 16, issue 11 (Sep. 2016) , p. 6717-6723  
3.
10 p, 3.4 MB Fe₃O₄@NiFexOy nanoparticles with enhanced electrocatalytic properties for oxygen evolution in carbonate electrolyte / Luo, Z. (Institut de Recerca en Energia de Catalunya) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Nafria, Raquel (Institut de Recerca en Energia de Catalunya) ; Joshua, Gihan (Institut de Recerca en Energia de Catalunya) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Guardia, Pablo (Institut de Recerca en Energia de Catalunya) ; Flox, Cristina (Institut de Recerca en Energia de Catalunya) ; Martínez-Boubeta, Carlos (Freelancer) ; Simeonidis, Konstantinos (Aristotle University Thessaloniki. Department of Physics) ; Llorca, Jordi (Universitat Politècnica de Catalunya. Institut de Tècniques Energètiques) ; Morante, Joan Ramon (Institut de Recerca en Energia de Catalunya) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Ibáñez, Maria (Institut de Recerca en Energia de Catalunya) ; Cabot, A. (Institut de Recerca en Energia de Catalunya)
The design and engineering of earth-abundant catalysts that are both cost-effective and highly active for water splitting are crucial challenges in a number of energy conversion and storage technologies. [...]
2016 - 10.1021/acsami.6b09888
ACS applied materials and interfaces, Vol. 8, issue 43 (Feb. 2016) , p. 29461-29469  
4.
8 p, 9.7 MB Orientationally ordered silicon nanocrystal cuboctahedra in superlattices / Yu, Yixuan (University of Texas. Texas Materials Institute) ; Lu, Xiaotang (University of Texas. Texas Materials Institute) ; Guillaussier, Adrien (University of Texas. Texas Materials Institute) ; Voggu, Vikas Reddy (University of Texas. Texas Materials Institute) ; Pineros, William (University of Texas. Texas Materials Institute) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Smilgies, Detlef-M. (Cornell University. Cornell High Energy Synchrotron Source) ; Truskett, Thomas M. (University of Texas. Texas Materials Institute) ; Korgel, Brian A. (University of Texas. Texas Materials Institute)
Uniform silicon nanocrystals were synthesized with cuboctahedral shape and passivated with 1-dodecene capping ligands. Transmission electron microscopy, electron diffraction, and grazing incidence wide-angle and small-angle X-ray scattering show that these soft cuboctahedra assemble into face-centered cubic superlattices with orientational order. [...]
2016 - 10.1021/acs.nanolett.6b04006
Nano Letters, Vol. 16, issue 12 (2016) , p. 7814-7821  
5.
12 p, 1.9 MB Orientation symmetry breaking in self-assembled Ce1- : XGdxO2- y nanowires derived from chemical solutions / Queraltó López, Albert (Institut de Ciència de Materials de Barcelona) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Martínez, Lidia (Instituto de Ciencia de Materiales de Madrid) ; Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón) ; Gibert, Marta (Université de Genève. Département de Physique de la Matière Quantique) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Hühne, Ruben (Institut für Metallische Werkstoffe) ; Obradors, Xavier (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Puig i Molina, Mª Teresa (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC))
Understanding the growth mechanisms of nanostructures obtained from chemical solutions, a high-throughput production methodology, is essential to correlate precisely the growth conditions with the nanostructures' morphology, dimensions and orientation. [...]
2016 - 10.1039/c6ra23717g
RSC Advances, Vol. 6, issue 99 (2016) , p. 97226-97236  
6.
21 p, 1.0 MB High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga / Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 - 10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874  
7.
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido Ariza, José A. (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  
8.
8 p, 2.1 MB Long-lived excitons in GaN/AlN nanowire heterostructures / Beeler, Mark (Commissariat à l'énergie atomique et aux énergies alternatives (França)) ; Lim, Caroline B. (Commissariat à l'énergie atomique et aux énergies alternatives (França)) ; Hille, Pascal (Justus Liebig-Universität Gießen. Physikalisches Institut) ; Bleuse, Joel (Commissariat à l'énergie atomique et aux énergies alternatives (França)) ; Schörmann, Jörg (I. Physikalisches Institut, Justus-Liebig-Universität Gießen) ; De La Mata, Maria (Institut de Ciència dels Materials de Barcelona) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (I. Physikalisches Institut, Justus-Liebig-Universität Gießen) ; Monroy, Eva (Commissariat à l'énergie atomique et aux énergies alternatives (França))
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. [...]
2015 - 10.1103/PhysRevB.91.205440
Physical Review B, Vol. 91, issue 20 (May 2015) , art. 205440  
9.
10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, S. (Polytechnique Montréal. Département de génie physique) ; Givan, U. (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, S. (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K.M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D.N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, O. (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  
10.
15 p, 3.9 MB UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices / Lähnemann, Jonas (University Grenoble Alpes) ; Den Hertog, Martien (Institut Nèel (Grenoble, França)) ; Hille, Pascal (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; De La Mata, Maria (Institut Catalá de Nanociència i Nanotecnologia) ; Fournier, Thierry (Institut Nèel (Grenoble, França)) ; Schörmann, Jörg (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Monroy, Eva (University Grenoble Alpes)
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. [...]
2016 - 10.1021/acs.nanolett.6b00806
Nano Letters, Vol. 16, Num. 5 (May 2016) , p. 3260-3267  

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