visitant ::
identificació
|
|||||||||||||||
Cerca | Lliura | Ajuda | Servei de Biblioteques | Sobre el DDD | Català English Español |
Pàgina inicial > Articles > Articles publicats > A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials |
Data: | 2015 |
Resum: | Numerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO) is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides). Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e. g. , zinc oxide, ZnO) is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn²+ by other metals (e. g. , Al³+). Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O²− versus halogenides). A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn₃O₃' preorganized on the molecular scale (Hal = I, Br, Cl). We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low- T photoluminescence, impedance and THz spectroscopies. |
Ajuts: | European Commission 628197 Ministerio de Ciencia e Innovación MAT2012-31392 Ministerio de Ciencia e Innovación CSD2010-0044 |
Nota: | Correccions a aquest document es poden consultar a a https://ddd.uab.cat/record/185756 |
Nota: | The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: http://www.beilstein-journals.org/bjnano |
Drets: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió publicada |
Matèria: | Chemical doping ; Metal oxides ; Semiconductor nanoparticles ; Single-source precursors |
Publicat a: | Beilstein journal of nanotechnology, Vol. 6 (2015) , p. 2161-2172, ISSN 2190-4286 |
12 p, 3.4 MB |