Web of Science: 25 citas, Scopus: 24 citas, Google Scholar: citas,
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Lähnemann, Jonas (University Grenoble Alpes)
Den Hertog, Martien (Institut Nèel (Grenoble, França))
Hille, Pascal (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen)
Mata Fernández, María de la (Institut Catalá de Nanociència i Nanotecnologia)
Fournier, Thierry (Institut Nèel (Grenoble, França))
Schörmann, Jörg (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Eickhoff, Martin (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen)
Monroy, Eva (University Grenoble Alpes)

Fecha: 2016
Resumen: We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. As a consequence, the time response is rather independent of the dark current.
Nota: Número d'acord de subvenció AGAUR/2014/SGR-1638
Nota: Número d'acord de subvenció MINECO/MAT2014-51480-ERC
Nota: Número d'acord de subvenció EC/FP7/278428
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; acceptedVersion
Materia: AlN ; GaN ; Nanowires ; Photocurrent spectroscopy ; Photoluminescence spectroscopy ; UV photodetector
Publicado en: Nano Letters, Vol. 16, Num. 5 (May 2016) , p. 3260-3267, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.6b00806

15 p, 3.9 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
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 Registro creado el 2018-09-18, última modificación el 2019-05-10

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