UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Lähnemann, Jonas (University Grenoble Alpes)
Den Hertog, Martien (Institut Néel (Grenoble, França))
Hille, Pascal (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen)
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia)
Fournier, Thierry (Institut Néel (Grenoble, França))
Schörmann, Jörg (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Eickhoff, Martin (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen)
Monroy, Eva (University Grenoble Alpes)

Date:	2016
Abstract:	We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. As a consequence, the time response is rather independent of the dark current.
Grants:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638 Ministerio de Economía y Competitividad MAT2014-51480-ERC European Commission 278428
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	AlN ; GaN ; Nanowires ; Photocurrent spectroscopy ; Photoluminescence spectroscopy ; UV photodetector
Published in:	Nano letters, Vol. 16, Num. 5 (May 2016) , p. 3260-3267, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.6b00806

Post-print 15 p, 3.9 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles