High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga
Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
De La Mata, Maria (Institut de Ciència de Materials de Barcelona)
Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)

Título variante:	Amorphous silicon mediates a high yield in GaAs nanowire arrays on Si
Fecha:	2015
Resumen:	GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. In this work, we provide some of the key elements for obtaining a high yield of GaAs nanowires on patterned Si in a reproducible way: contact angle and pinning of the Ga droplet inside the apertures achieved by the modification of the surface properties of the nanoscale areas exposed to growth. As an example, an amorphous silicon layer between the crystalline substrate and the oxide mask results in a contact angle around 90°, leading to a high yield of vertical nanowires. Another example for tuning the contact angle is anticipated, native oxide with controlled thickness. This work opens new perspectives for the rational and reproducible growth of GaAs nanowire arrays on silicon.
Ayudas:	European Commission 316751 Ministerio de Economía y Competitividad MAT2014-51480-ERC Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638
Nota:	Títol del preprint: Amorphous silicon mediates a high yield in GaAs nanowire arrays on Si.
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió sotmesa a revisió
Materia:	Arrays ; Ga-assisted GaAs nanowires ; III-V on silicon ; Molecular beam epitaxy ; Vertical nanowires
Publicado en:	Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874, ISSN 1530-6992

DOI: 10.1021/nl504437v

Preprint 21 p, 1.0 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados