Above-Bandgap Photovoltages in Antiferroelectrics
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia)
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)

Data:	2016
Resum:	The closed circuit photocurrent and open circuit photovoltage of antiferroelectric thin films were characterized both in their ground (antipolar) state and in their polarized state. A sharp transition happens from near zero to large photovoltages as the polarization is switched on, consistent with the activation of the bulk photovoltaic effect. The AFE layers have been grown by a solution processing method (sol?gel synthesis followed by spin coating deposition) onto fluorine-doped tin oxide (FTO), a transparent conducting oxide with low sheet resistance and a higher resilience to high-temperature processing than indium tin oxide and a standard for solar cells such as organometal trihalide perovskites. Light absorption confirmed that the PZO films are, as expected, wide-band gap semiconductors with a gap of 3. 7. 8 eV and thus highly absorbing in the near-ultraviolet range. On a virgin sample, there is no shortcircuit photocurrent, consistent with the antipolar nature of the ground state. As an external bias voltage is applied, the current remains negligible until suddenly, at the coercive voltage, a spike is observed, corresponding to the transient displacement current caused by the onset of polarization.
Ajuts:	Ministerio de Economía y Competitividad SEV-2013-0295 Ministerio de Economía y Competitividad ENE2013-48816-C5-4-R Ministerio de Economía y Competitividad FIS2013-48668-C2-1-P Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1212 European Commission 308023
Nota:	Altres ajuts: COST Action StableNextSol project MP1307
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Above bandgap voltages ; Antiferroelectrics ; Photovoltaics
Publicat a:	Advanced materials, Vol. 28, Issue 43 (November 2016) , p. 9644-9647, ISSN 1521-4095

DOI: 10.1002/adma.201603176

Postprint 16 p, 719.6 KB

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