Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
Aseev, Pavel (Delft University of Technology)
Fursina, Alexandra (Delft University of Technology)
Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research)
Krizek, Filip (University of Copenhagen)
Sestoft, Joachim E. (University of Copenhagen)
Borsoi, Francesco (Delft University of Technology)
Heedt, Sebastian (Delft University of Technology)
Wang, Guanzhong (Delft University of Technology)
Binci, Luca (Delft University of Technology)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Swoboda, Timm (Institut Català de Nanociència i Nanotecnologia)
Koops, René (QuTech and Netherlands Organization for Applied Scientific Research)
Uccelli, Emanuele (QuTech and Netherlands Organization for Applied Scientific Research)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Krogstrup, Peter (University of Copenhagen)
Kouwenhoven, Leo P. (Delft University of Technology)
Caroff, Philippe (Delft University of Technology)

Fecha:	2019
Resumen:	Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov-Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance.
Ayudas:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-327 Ministerio de Economía y Competitividad SEV-2013-0295
Nota:	This is an open access article published under an ACS AuthorChoice License. See Standard ACS AuthorChoice/Editors' Choice Usage Agreement - https://pubs.acs.org/page/policy/authorchoice_termsofuse.html
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Materia:	Selective-area growth ; Epitaxy ; Selectivity ; III−V nanowire ; InAs ; GaAs Molecular beam epitaxy
Publicado en:	Nano letters, Vol. 19, Issue 1 (January 2019) , p. 218-227, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.8b03733
PMID: 30521341

10 p, 8.1 MB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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