Web of Science: 4 cites, Scopus: 6 cites, Google Scholar: cites,
Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
Aseev, Pavel (Delft University of Technology)
Fursina, Alexandra (Delft University of Technology)
Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research)
Krizek, Filip (University of Copenhagen)
Sestoft, Joachim E. (University of Copenhagen)
Borsoi, Francesco (Delft University of Technology)
Heedt, Sebastian (Delft University of Technology)
Wang, Guanzhong (Delft University of Technology)
Binci, Luca (Delft University of Technology)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Swoboda, Timm (Institut Català de Nanociència i Nanotecnologia)
Koops, René (QuTech and Netherlands Organization for Applied Scientific Research)
Uccelli, Emanuele (QuTech and Netherlands Organization for Applied Scientific Research)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Krogstrup, Peter (University of Copenhagen)
Kouwenhoven, Leo P. (Delft University of Technology)
Caroff, Philippe (Delft University of Technology)

Data: 2019
Resum: Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov-Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance.
Nota: This is an open access article published under an ACS AuthorChoice License. See Standard ACS AuthorChoice/Editors' Choice Usage Agreement - https://pubs.acs.org/page/policy/authorchoice_termsofuse.html
Nota: Número d'acord de subvenció AGAUR/2017/SGR-327
Nota: Número d'acord de subvenció MINECO/SEV-2013-0295
Drets: Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades. Creative Commons
Llengua: Anglès.
Document: article ; recerca ; publishedVersion
Matèria: Selective-area growth ; Epitaxy ; Selectivity ; III−V nanowire ; InAs ; GaAs Molecular beam epitaxy
Publicat a: Nano letters, Vol. 19, Issue 1 (January 2019) , p. 218-227, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.8b03733
PMID: 30521341


10 p, 8.1 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2019-06-03, darrera modificació el 2019-08-06



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