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Pàgina inicial > Articles > Articles publicats > Nanotexturing to Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap |
Data: | 2016 |
Resum: | Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density. |
Ajuts: | Ministerio de Economía y Competitividad TEC2014-53727-C2-1-R Ministerio de Economía y Competitividad MAT2014-53500-R Ministerio de Economía y Competitividad FIS2015-64886-C5-3-P Ministerio de Economía y Competitividad FIS2015-64886-C5-4-P Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-301 Ministerio de Economía y Competitividad SEV-2015-0496 Ministerio de Economía y Competitividad SEV-2013-0295 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Band gap engineering ; Indium selenide ; Microphotoluminescence ; Nanotexturing ; Optical properties ; Two-dimensional materials |
Publicat a: | Nano letters, Vol. 16, Issue 5 (April 2016) , p. 3221-3229, ISSN 1530-6992 |
Postprint 26 p, 1.0 MB |