Flexoelectric MEMS : Towards an electromechanical strain diode
Bhaskar, Umesh K. (Institut Català de Nanociència i Nanotecnologia)
Banerjee, N. (University of Twente)
Abdollahi, Amir (Institut Català de Nanociència i Nanotecnologia)
Solanas, E. (Lyncée Tec SA)
Rijnders, G. (University of Twente)
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)

Date:	2016
Abstract:	Piezoelectricity and flexoelectricity are two independent but not incompatible forms of electromechanical response exhibited by nanoscale ferroelectrics. Here, we show that flexoelectricity can either enhance or suppress the piezoelectric response of the cantilever depending on the ferroelectric polarity and lead to a diode-like asymmetric (two-state) electromechanical response.
Grants:	European Commission 308023 Ministerio de Economía y Competitividad FIS2013-48668-C2-1-P
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Electromechanical response ; Electromechanical strain ; Flexoelectric ; Flexoelectricity ; Nano scale ; Piezoelectric response ; Two-state
Published in:	Nanoscale, Vol. 8, Issue 3 (January 2016) , p. 1293-1298, ISSN 2040-3372

DOI: 10.1039/c5nr06514c

Postprint 7 p, 2.4 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles