Four-state ferroelectric spin-valve
Quindeau, Andy (Max Planck Institute of Microstructure Physics)
Fina, Ignasi (University of Warwick. Department of Physics)
Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia)
Apachitei, Geanina (University of Warwick. Department of Physics)
Ferrer, Pilar (Harwell Science and Innovation Campus. Diamond Light Source)
Nicklin, Chris (Harwell Science and Innovation Campus. Diamond Light Source)
Pippel, Eckhard (Max Planck Institute of Microstructure Physics)
Hesse, Dietrich (Max Planck Institute of Microstructure Physics)
Alexe, Marin (University of Warwick. Department of Physics)

Date:	2015
Abstract:	Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction.
Grants:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2011/BP-A-00220
Note:	Altres ajuts: Beatriu de Pinós 2011BP-A00220
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Published in:	Scientific reports, Vol. 5 (May 2015) , art. 9749, ISSN 2045-2322

DOI: 10.1038/srep09749
PMID: 25961513

7 p, 853.2 KB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles