Electronic properties of single-layer and multilayer transition metal dichalcogenides MX₂ (M = Mo, W and X = S, Se)
Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid)
Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia)
López-Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid)
Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid)
Cappelluti, Emmanuele (Consiglio Nazionale delle Ricerche. Istituto de Sistemi Complessi)
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)

Fecha:	2014
Resumen:	Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here the electronic properties of semiconducting MX, where M = Mo or W and X = S or Se, are reviewed. Based on of density functional theory calculations, which include the effect of spin-orbit interaction, the band structure of single-layer, bilayer and bulk compounds is discussed. The band structure of these compounds is highly sensitive to elastic deformations, and it is reviewed how strain engineering can be used to manipulate and tune the electronic and optical properties of those materials. Further, the effect of disorder and imperfections in the lattice structure and their effect on the optical and transport properties of MX is discussed. The superconducting transition in these compounds, which has been observed experimentally, is analyzed, as well as the different mechanisms proposed so far to explain the pairing. Finally, a discussion on the excitonic effects which are present in these systems is included.
Ayudas:	European Commission 290846 Ministerio de Economía y Competitividad FIS2012-37549-C05-02 Ministerio de Economía y Competitividad FIS2011-23713 Ministerio de Economía y Competitividad CSD2007-00050
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Materia:	Single layer ; Transition metal dichalcogenides
Publicado en:	Annalen der Physik, Vol. 526, issue 9-10 (Oct. 2014) , p. 347-357, ISSN 1521-3889

DOI: 10.1002/andp.201400128

Postprint 10 p, 331.0 KB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados