Web of Science: 123 cites, Scopus: 120 cites, Google Scholar: cites,
Electronic properties of single-layer and multilayer transition metal dichalcogenides MX₂ (M = Mo, W and X = S, Se)
Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid)
Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia)
López-Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid)
Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid)
Cappelluti, Emmanuele (Consiglio Nazionale delle Ricerche. Istituto de Sistemi Complessi)
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)

Data: 2014
Resum: Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here the electronic properties of semiconducting MX, where M = Mo or W and X = S or Se, are reviewed. Based on of density functional theory calculations, which include the effect of spin-orbit interaction, the band structure of single-layer, bilayer and bulk compounds is discussed. The band structure of these compounds is highly sensitive to elastic deformations, and it is reviewed how strain engineering can be used to manipulate and tune the electronic and optical properties of those materials. Further, the effect of disorder and imperfections in the lattice structure and their effect on the optical and transport properties of MX is discussed. The superconducting transition in these compounds, which has been observed experimentally, is analyzed, as well as the different mechanisms proposed so far to explain the pairing. Finally, a discussion on the excitonic effects which are present in these systems is included.
Ajuts: European Commission 290846
Ministerio de Economía y Competitividad FIS2012-37549-C05-02
Ministerio de Economía y Competitividad FIS2011-23713
Ministerio de Economía y Competitividad CSD2007-00050
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió acceptada per publicar
Matèria: Single layer ; Transition metal dichalcogenides
Publicat a: Annalen der Physik, Vol. 526, issue 9-10 (Oct. 2014) , p. 347-357, ISSN 1521-3889

DOI: 10.1002/andp.201400128

10 p, 331.0 KB

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Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
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 Registre creat el 2019-09-23, darrera modificació el 2021-09-29

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