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Incorporation of Counter Ions in Organic Molecules : New Strategy in Developing Dopant-Free Hole Transport Materials for Efficient Mixed-Ion Perovskite Solar Cells
Zhang, Jinbao (Uppsala University. Department of Chemistry-Ångström Laboratory)
Xu, Bo (Kungl. Tekniska högskolan (Estocolm (Suècia))
Yang, Li (Uppsala University. Department of Engineering Science)
Mingorance, Alba (Institut Català de Nanociència i Nanotecnologia)
Ruan, Changqing (Uppsala University. Department of Engineering Science)
Hua, Yong (KTH-Royal Institute of Technology)
Wang, Linqin (Kungl. Tekniska högskolan (Estocolm (Suècia))
Vlachopoulos, Nick (École Polytechnique Fédérale de Lausanne)
Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia)
Boschloo, Gerrit (Uppsala University. Department of Chemistry-Ångström Laboratory)
Hagfeldt, Anders (Ecole Polytechnique Fédérale de Lausanne)
Sun, Licheng (Dalian University of Technology)
Johansson, Erik M. J. (Uppsala University. Department of Chemistry-Ångström Laboratory)

Data: 2017
Resum: Hole transport matertial (HTM) as charge selective layer in perovskite solar cells (PSCs) plays an important role in achieving high power conversion efficiency (PCE). It is known that the dopants and additives are necessary in the HTM in order to improve the hole conductivity of the HTM as well as to obtain high efficiency in PSCs, but the additives can potentially induce device instability and poor device reproducibility. In this work a new strategy to design dopant-free HTMs has been presented by modifying the HTM to include charged moieties which are accompanied with counter ions. The device based on this ionic HTM X44 dos not need any additional doping and the device shows an impressive PCE of 16. 2%. Detailed characterization suggests that the incorporated counter ions in X44 can significantly affect the hole conductivity and the homogeneity of the formed HTM thin film. The superior photovoltaic performance for X44 is attributed to both efficient hole transport and effective interfacial hole transfer in the solar cell device. This work provides important insights as regards the future design of new and efficient dopant free HTMs for photovotaics or other optoelectronic applications.
Ajuts: Ministerio de Economía y Competitividad SEV-2013-0295
Ministerio de Economía y Competitividad MAT2015-68994-REDC
Ministerio de Economía y Competitividad ENE2013-48816-C5-4-R
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió sotmesa a revisió
Matèria: Counter ions ; Dopant free ; High efficiencies ; Ionic hole transport material ; Mixed ion perovskite
Publicat a: Advanced Energy Materials, Vol. 7, Issue 14 (July 2017) , art. 1602736, ISSN 1614-6840

DOI: 10.1002/aenm.201602736


Preprint
16 p, 1.1 MB

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Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2019-10-21, darrera modificació el 2023-11-02



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