Colloidal Silicon-Germanium Nanorod Heterostructures
Lu, Xiaotang (University of Texas. Texas Materials Institute)
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Korgel, Brian A. (University of Texas. Texas Materials Institute)

Date:	2017
Abstract:	Colloidal nanorods with axial Si and Ge heterojunction segments were produced by solution-liquid-solid (SLS) growth using Sn as a seed metal and trisilane and diphenylgermane as Si and Ge reactants. The low solubility of Si and Ge in Sn helps to generate abrupt Si-Ge heterojunction interfaces. To control the composition of the nanorods, it was also necessary to limit an undesired side reaction between the Ge reaction byproduct tetraphenylgermane and trisilane. High-resolution transmission electron microscopy reveals that the Si-Ge interfaces are epitaxial, which gives rise to a significant amount of bond strain resulting in interfacial misfit dislocations that nucleate stacking faults in the nanorods.
Grants:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638 Ministerio de Economía y Competitividad SEV-2013-0295
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Colloidal nanorods ; Diphenylgermane ; Interfacial misfit dislocations ; Liquid solids ; Reaction byproducts ; Si-Ge heterojunction ; Side reactions ; Silicon Germanium
Published in:	Chemistry of materials, Vol. 29, Issue 22 (November 2017) , p. 9786-9792, ISSN 1520-5002

DOI: 10.1021/acs.chemmater.7b03868

Postprint 25 p, 779.1 KB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles