Nonvolatile Memories Based on Graphene and Related 2D Materials
Bertolazzi, Simone (Université de Strasbourg)
Bondavalli, Paolo (Chemical and Multifunctional Materials Lab)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
San, Tamer (Texas Instruments)
Choi, Sung-Yool (School of Electrical Engineering. Graphene/2D Materials Research Center)
Colombo, Luigi (University of Texas at Dallas. Department of Materials Science and Engineering)
Bonaccorso, Francesco (BeDimensional Spa)
Samorì, Paolo (Université de Strasbourg)

Fecha:	2019
Resumen:	The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high-capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon-based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low-cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories. The physical and chemical mechanisms underlying the switching of GRM-based memory devices studied in the last decade are discussed. Although at this stage most of the proof-of-concept devices investigated do not compete with state-of-the-art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.
Ayudas:	European Commission 696656 European Commission 700802 Ministerio de Economía y Competitividad SEV-2017-0706
Derechos:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió sotmesa a revisió
Materia:	Black phosphorous ; Graphene ; Nonvolatile memories ; Transition metal dichalcogenides ; 2D materials
Publicado en:	Advanced materials, Vol. 31, Issue 10 (March 2019) , art. 1806663, ISSN 1521-4095

DOI: 10.1002/adma.201806663
PMID: 30663121

Preprint 81 p, 9.3 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados