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Nonvolatile Memories Based on Graphene and Related 2D Materials
Bertolazzi, Simone (Université de Strasbourg)
Bondavalli, Paolo (Chemical and Multifunctional Materials Lab)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
San, Tamer (Texas Instruments)
Choi, Sung-Yool (School of Electrical Engineering. Graphene/2D Materials Research Center)
Colombo, Luigi (University of Texas at Dallas. Department of Materials Science and Engineering)
Bonaccorso, Francesco (BeDimensional Spa)
Samorì, Paolo (Université de Strasbourg)

Data: 2019
Resum: The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high-capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon-based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low-cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories. The physical and chemical mechanisms underlying the switching of GRM-based memory devices studied in the last decade are discussed. Although at this stage most of the proof-of-concept devices investigated do not compete with state-of-the-art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.
Ajuts: European Commission 696656
European Commission 700802
Ministerio de Economía y Competitividad SEV-2017-0706
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió sotmesa a revisió
Matèria: Black phosphorous ; Graphene ; Nonvolatile memories ; Transition metal dichalcogenides ; 2D materials
Publicat a: Advanced materials, Vol. 31, Issue 10 (March 2019) , art. 1806663, ISSN 1521-4095

DOI: 10.1002/adma.201806663
PMID: 30663121


Preprint
81 p, 9.3 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2020-02-06, darrera modificació el 2023-10-01



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