Revealing Strain Effects on the Chemical Composition of Perovskite Oxide Thin Films Surface, Bulk, and Interfaces
van den Bosch, Celeste A. M. (Imperial College. Department of Materials)
Cavallaro, Andrea (Imperial College. Department of Materials)
Moreno, Roberto (Institut Català de Nanociència i Nanotecnologia)
Cibin, Giannantonio (Diamond Light Source Ltd.)
Kerherve, Gwilherm (Imperial College. Department of Materials)
Caicedo Roque, Jose Manuel (Institut Català de Nanociència i Nanotecnologia)
Lippert, Thomas K. (ETH Zürich. Department of Chemistry and Applied Biosciences)
Doebeli, Max (ETH Zurich)
Santiso, José (Institut Català de Nanociència i Nanotecnologia)
Skinner, Stephen J. (Imperial College. Department of Materials)
Aguadero, Ainara (Imperial College. Department of Materials)

Data:	2020
Resum:	Understanding the effects of lattice strain on oxygen surface and diffusion kinetics in oxides is a controversial subject that is critical for developing efficient energy storage and conversion materials. In this work, high-quality epitaxial thin films of the model perovskite LaSrMnCoO (LSMC), under compressive or tensile strain, are characterized with a combination of in situ and ex situ bulk and surface-sensitive techniques. The results demonstrate a nonlinear correlation of mechanical and chemical properties as a function of the operation conditions. It is observed that the effect of strain on reducibility is dependent on the "effective strain" induced on the chemical bonds. In-plain strain, and in particular the relative BO length bond, is the key factor controlling which of the B-site cation can be reduced preferentially. Furthermore, the need to use a set of complimentary techniques to isolate different chemically induced strain effects is proven. With this, it is confirmed that tensile strain favors the stabilization of a more reduced lattice, accompanied by greater segregation of strontium secondary phases and a decrease of oxygen exchange kinetics on LSMC thin films.
Drets:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Chemical expansion ; Epitaxial thin films ; In situ interfaces ; Strain engineering
Publicat a:	Advanced materials interfaces, Vol. 7, Issue 2 (January 2020) , art. 1901440, ISSN 2196-7350

DOI: 10.1002/admi.201901440

Postprint 29 p, 2.1 MB

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