Field Effect in Graphene-Based van der Waals Heterostructures : Stacking Sequence Matters
Stradi, Daniele (QuantumWise A/S)
Papior, Nick (Institut Català de Nanociència i Nanotecnologia)
Hansen, O. (Technical University of Denmark. Department of Micro- and Nanotechnology)
Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology)

Date:	2017
Abstract:	Stacked van der Waals (vdW) heterostructures where semiconducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. We can trace this behavior to the stacking-dependent response of the contact region to the capacitive electric field induced by the gate. The contact resistance is a central parameter and our observation establishes an important design rule for ultrathin devices based on 2D atomic crystals.
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Language:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Subject:	Vdw heterostructures ; Field-effect ; Transport ; Graphene ; Density functional theory ; Nonequilibrium Green's function
Published in:	Nano letters, Vol. 17, Issue 4 (April 2017) , p. 2660-2666, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.7b00473

Preprint 21 p, 2.0 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles