Web of Science: 12 cites, Scopus: 13 cites, Google Scholar: cites,
Field Effect in Graphene-Based van der Waals Heterostructures : Stacking Sequence Matters
Stradi, Daniele (QuantumWise A/S)
Papior, Nick (Institut Català de Nanociència i Nanotecnologia)
Hansen, O. (Technical University of Denmark. Department of Micro- and Nanotechnology)
Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology)

Data: 2017
Resum: Stacked van der Waals (vdW) heterostructures where semiconducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. We can trace this behavior to the stacking-dependent response of the contact region to the capacitive electric field induced by the gate. The contact resistance is a central parameter and our observation establishes an important design rule for ultrathin devices based on 2D atomic crystals.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; submittedVersion
Matèria: Vdw heterostructures ; Field-effect ; Transport ; Graphene ; Density functional theory ; Nonequilibrium Green's function
Publicat a: Nano letters, Vol. 17, Issue 4 (April 2017) , p. 2660-2666, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.7b00473


Preprint
21 p, 2.0 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2020-06-25, darrera modificació el 2020-11-07



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