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Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating
Russell, Stephen (University of Warwick. School of Engineering)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
McConville, Christopher F. (RMIT University. College of Science, Engineering and Health)
Fisher, Craig (University of Warwick, School of Engineering)
Hamilton, Dean P. (University of Warwick, School of Engineering)
Mawby, Philip A. (University of Warwick, School of Engineering)
Jennings, Michael R. (University of Warwick, School of Engineering)

Fecha: 2017
Resumen: A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.
Derechos: Tots els drets reservats.
Lengua: Anglès
Documento: article ; recerca ; acceptedVersion
Materia: FET ; Gallium oxide ; Molecular beam epitaxy ; Normally-off ; Self-heating ; Silicon carbide ; Threshold voltage
Publicado en: IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261, ISSN 2168-6734

DOI: 10.1109/JEDS.2017.2706321


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El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados

 Registro creado el 2020-06-25, última modificación el 2021-01-19



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