Charge transport in polycrystalline graphene : challenges and opportunities
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia)
Duong, Dinh Loc (Sungkyunkwan University. Institute for Basic Science)
Nguyen, Van Luan (Sungkyunkwan University. Department of Energy Science)
Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia)
Kotakoski, Jani (University of Helsinki. Department of Physics)
Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia)
Lee, Young Hee (Sungkyunkwan University. Institute for Basic Science)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)

Fecha:	2014
Resumen:	Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately, CVD graphene is intrinsically polycrystalline, with pristine graphene grains stitched together by disordered grain boundaries, which can be either a blessing or a curse. On the one hand, grain boundaries are expected to degrade the electrical and mechanical properties of polycrystalline graphene, rendering the material undesirable for many applications. On the other hand, they exhibit an increased chemical reactivity, suggesting their potential application to sensing or as templates for synthesis of one-dimensional materials. Therefore, it is important to gain a deeper understanding of the structure and properties of graphene grain boundaries. Here, we review experimental progress on identification and electrical and chemical characterization of graphene grain boundaries. We use numerical simulations and transport measurements to demonstrate that electrical properties and chemical modification of graphene grain boundaries are strongly correlated. This not only provides guidelines for the improvement of graphene devices, but also opens a new research area of engineering graphene grain boundaries for highly sensitive electro-biochemical devices.
Ayudas:	European Commission 604391 Ministerio de Economía y Competitividad MAT2012-33911
Derechos:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió sotmesa a revisió
Materia:	Graphene ; Grain boundaries ; Charge transport ; Scaling law ; Functionalization
Publicado en:	Advanced materials, Vol. 26, issue 30 (August 2014) , p. 5079-5094, ISSN 1521-4095

DOI: 10.1002/adma.201401389

Preprint 47 p, 1.9 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados