Beyond substrates : strain engineering of ferroelectric membranes
Pesquera, David (Institut Català de Nanociència i Nanotecnologia)
Parsonnet, Eric (University of California. Department of Physics)
Qualls, Alexander (University of California. Department of Physics)
Xu, Ruijuan (Stanford University. Department of Applied Physics)
Gubser, Andrew J. (University of California. Department of Nuclear Engineering)
Kim, Jieun (University of California. Department of Materials Science and Engineering)
Jiang, Yizhe (University of California. Department of Materials Science and Engineering)
Velarde, Gabriel (University of California. Department of Materials Science and Engineering)
Huang, Yen-Lin (University of California. Department of Materials Science and Engineering)
Hwang, Harold Y. (Stanford University. Department of Applied Physics)
Ramesh, Ramamoorthy (University of California. Department of Materials Science and Engineering)
Martin, Lan W. (University of California. Department of Materials Science and Engineering)

Data:	2020
Resum:	Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO, production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. In devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0. 1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.
Ajuts:	European Commission 797123 Ministerio de Ciencia e Innovación SEV-2017-0706
Drets:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Llengua:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Matèria:	Complex oxides on silicon ; Epitaxial lift-off ; Ferroelectric domain switching ; Flexible devices ; Strain engineering
Publicat a:	Advanced materials, Vol. 32, issue 43 (Oct. 2020) , art. 2003780, ISSN 1521-4095

DOI: 10.1002/adma.202003780

Preprint 32 p, 951.5 KB

Postprint 30 p, 995.7 KB

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Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
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