visitante ::
identificación
|
|||||||||||||||
Buscar | Enviar | Ayuda | Servicio de Bibliotecas | Sobre el DDD | Català English Español |
Página principal > Artículos > Artículos publicados > Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces : |
Fecha: | 2020 |
Resumen: | Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields. |
Ayudas: | European Commission 716655 European Commission 722176 Ministerio de Economía y Competitividad SEV-2017-0706 Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-327 |
Nota: | We acknowledge financial support from the Microsoft Quantum initiative, the Danish Agency for Science and Innovation through DANSCATT and the Swiss National Science Foundation (SNF-Grant no. 200021_165910 and project no. CR-SII2 147606). ICN2 is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of the Universitat Autònoma de Barcelona Materials Science PhD program. Part of the HAADF STEM microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza. ICN2 acknowledges support from CSIC Research Platform on Quantum Technologies PTI-001. This work is partially based on experiments performed on the reflectometer Amor at the Swiss spallation neutron source (SINQ) and Surfaces/Interfaces: Microscopy (SIM) beamline of the Swiss Light Source (SLS), Paul Scherrer Institute, Villigen, Switzerland. This work is also partially carried out at the light source PETRA III at DESY, a member of the Helmholtz Association (HGF). |
Derechos: | Tots els drets reservats. |
Lengua: | Anglès |
Documento: | Article ; recerca ; Versió sotmesa a revisió |
Materia: | Quantum computing ; Proximity effects ; MBE ; Hybrid materials ; Magnetic proximity ; Exchange field ; Band alignment |
Publicado en: | ACS applied materials & interfaces, Vol. 12, issue 7 (Feb. 2020) , p. 8780-8787, ISSN 1944-8252 |
Preprint 29 p, 1.7 MB |