Flexible setup for the measurement of CMOS time-dependent variability with array-based integrated circuits
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Diaz-Fortuny, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla)
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla)
Roca, Elisenda (Instituto de Microelectrónica de Sevilla)
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla)

Date:	2020
Abstract:	This paper presents an innovative and automated measurement setup for the characterization of variability effects in CMOS transistors using array-based integrated circuits (ICs), through which a better understanding of CMOS reliability could be attained. This setup addresses the issues that come with the need for a trustworthy statistical characterization of these effects: testing a very large number of devices accurately but, also, in a timely manner. The setup consists of software and hardware components that provide a user-friendly interface to perform the statistical characterization of CMOS transistors. Five different electrical tests, comprehending time-zero and time-dependent variability effects, can be carried out. Test preparation is, with the described setup, reduced to a few seconds. Moreover, smart parallelization techniques allow reducing the typically time-consuming aging characterization from months to days or even hours. The scope of this paper thus encompasses the methodology and practice of measurement of CMOS time-dependent variability, as well as the development of appropriate measurement systems and components used in efficiently generating and acquiring the necessary electrical signals.
Grants:	Ministerio de Ciencia e Innovación TEC2016-75151-C3-R
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Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Transistors ; Stress ; Temperature measurement ; Integrated circuits ; Threshold voltage ; Stress measurement ; Human computer interaction
Published in:	IEEE Transactions on Instrumentation and Measurement, Vol. 69, Issue 3 (March 2020) , p. 853-864, ISSN 1557-9662

DOI: 10.1109/TIM.2019.2906415

Postprint 11 p, 4.0 MB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles