Experimental time evolution study of the HfO2-based IMPLY gate operation
Maestro Izquierdo, Marcos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Escudero, Manel (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rubio, Antonio 1954- (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica)

Date:	2018
Abstract:	In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. In the literature, the IMPLY operation has been widely simulated, but most of the efforts have been just focused on accomplishing its truth table, only considering the initial and final states of the gate. However, a complete understanding of the time evolution between states is still missing and barely reported yet. In this paper, the time evolution of the memristors involved in an IMPLY gate are studied in detail for every case of the gate. Furthermore, the impact on IMPLY gate operation of the internal resistor connected in series with the memristors of the IMPLY gate is included.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Logic ; Material implication (IMPLY) ; Memristors ; Resistive switching (RS)
Published in:	IEEE Transactions on Electron Devices, Vol. 65, issue 2 (Feb. 2018) , p. 404-410, ISSN 0018-9383

DOI: 10.1109/TED.2017.2778315

Postprint 7 p, 481.4 KB

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