Investigating the Device Performance Variation of a Buried Locally Gated Al/Al2O3 Graphene Field-Effect Transistor Process
Huang, Tzu-Jung (Rochester Institute of Technology)
Ankolekar, Adheesh (Rochester Institute of Technology)
Pacheco-Sanchez, Anibal (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Puchades, Ivan (Rochester Institute of Technology)

Fecha:	2023
Resumen:	In this study, a process is developed for the fabrication of buried top-gated graphene transistors with AlO as a gate dielectric, yielding devices that can be suitable for not only flexible electronics but also laser-induced graphene (LIG)-based technology implementations. A new processing option is presented with the use of tetraethyl-orthosilicate (TEOS) as an etch stop for contact via etching of AlO. Buried locally gated Al/AlO graphene field-effect transistors (GFETs) are fabricated with Dirac points as low as 4 V, with a metal-to-graphene contact resistance as low as ∼1. 7 kΩ·µm, and an average hole mobility of 457. 97 cm/V·s with a non-uniformity of 93%. Large device variation and non-uniformity in electrical performance are not uncommon for graphene-based devices, as process-induced defects play a major role in such variation. AFM, SEM, Raman spectroscopy, and model fitting indicated that the rough Al/AlO surface was the main factor for the observed device variation. AFM analysis indicated a graphene surface roughness Ra of 16. 19 nm on top of the buried Al/AlO gate in contrast to a Ra of 4. 06 nm over AlO/SiO. The results presented indicate the need to reduce device variability and non-uniformity by improving transfer methods, as well as the use of smoother surfaces and compatible materials. The presented analyses provide a framework with which other researchers can analyze and correlate device variation and non-uniformities while methods to reduce variability are investigated.
Ayudas:	Ministerio de Ciencia e Innovación FJC2020-046213-I
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Publicado en:	Applied sciences (Basel), Vol. 13, Issue 12 (June 2023) , art. 7201, ISSN 2076-3417

DOI: 10.3390/app13127201

15 p, 2.6 MB

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