A Smart Measurement System for the Combined Nanoscale and Device Level Characterization of Electron Devices : Implementation Using Ink-Jet Printing Technologies
Claramunt, Sergi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Arrese, Javier (Universitat de Barcelona. Departament d'Enginyeria Electrònica i Biomèdica)
Ruiz, Ana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Cirera, Albert (Universitat de Barcelona. Departament d'Enginyeria Electrònica i Biomèdica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2023
Abstract:	In this article, the integration into a single measurement system of device level and nanoscale measurement equipment is presented and applied to the electrical characterization of emerging electron devices. This system is a smart solution to simplify the test procedure, since it allows a fast switching between measurement modes (device or nanoscale level), also featuring an enlarged testing capability. Key in the system is a custom-made inkjet-printed circuit board (I-PCB) that connects the device terminals to the proper instrumentation. The flexibility offered by inkjet-printing technologies is a clear advantage, since many kinds of devices can be tested, without the need of expensive hardware modifications. As a particular case of study, the proposed strategy is demonstrated by implementing a system that alternates between standard electrical measurements with a Semiconductor Parameter Analyzer (SPA) and Conductive Atomic Force Microscopy (CAFM) nanoscale measurements on back-gate graphene field-effect transistors.
Grants:	Agencia Estatal de Investigación PID2019-103869RB Agencia Estatal de Investigación TEC2016-75151-C3-R Agencia Estatal de Investigación PID2019-105658RB-I00
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Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	CAFM ; Electrical measurements ; Graphene transistor ; HCI degradation ; Ink-jet printing
Published in:	IEEE Transactions on Nanotechnology, Vol. 22 (January 2023) , p. 28-35, ISSN 1536-125X

DOI: 10.1109/TNANO.2023.3234357

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