Home > Books and collections > Book chapters > Beneficial role of noise in Hf-based memristors |
Imprint: | Institute of Electrical and Electronics Engineers Inc., 2022 |
Description: | 5 pàg. |
Abstract: | The beneficial role of noise in the performance of Hf-based memristors has been experimentally studied. The addition of an external gaussian noise to the bias circuitry positively impacts the memristors characteristics by increasing the OFF/ON resistances ratio. The known stochastic resonance effect has been observed, when changing the standard deviation of the noise. The influence of the additive noise on the memristor current-voltage characteristic and on the set and reset related parameters are also presented. |
Grants: | Ministerio de Ciencia e Innovación PID2019-103869RB-C3 Agencia Estatal de Investigación TEC2017-90969-EXP |
Rights: | Tots els drets reservats. |
Language: | Anglès |
Document: | Capítol de llibre ; recerca ; Versió acceptada per publicar |
Subject: | Memristors ; Resistive switching ; RRAM devices ; Stochastic resonance |
Published in: | 2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022, p. 975-979, ISBN 9781665484855 |
Available from: 2024-12-30 Postprint |