Real-time threshold voltage compensation on dual-gate electrolyte-gated organic field-effect transistors
Lago, Nicolò (Università Degli Studi di Padova. Dipartimento di Ingegneria Dell'Informazione)
Buonomo, Marco (Università Degli Studi di Padova. Dipartimento di Ingegneria Dell'Informazione)
Ruiz Molina, Sara (Institut de Ciència de Materials de Barcelona)
Pollesel, Andrea (Università Degli Studi di Padova. Dipartimento di Ingegneria Dell'Informazione)
Hensel, Rafael C. (Università Degli Studi di Padova, Dipartimento di Scienze Chimiche)
Sedona, Francesco (Università di Padova. Dipartimento di Scienze Chimiche)
Sambi, Mauro (Università di Padova. Dipartimento di Scienze Chimiche)
Mas-Torrent, Marta (Institut de Ciència de Materials de Barcelona)
Casalini, Stefano (Università Degli Studi di Padova. Dipartimento di Scienze Chimiche)
Cester, Andrea (Università Degli Studi di Padova. Dipartimento di Ingegneria Dell'Informazione)

Data:	2022
Resum:	Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) offer many opportunities for the development of low-cost and low-power electronics suitable for applications like sensors and point-of-care tests; however, EGOFETs can be affected by the drift of their operative point that causes signals distortion and loss of information during sensing applications. Here, a blend of 2,8-Difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) and polystyrene (PS) is used as the active material for the fabrication of dual-gate EGOFETs. We exploited the dual-gate architecture to improve EGOFETs stability by implementing digital feedback that uses the back-gate electrode to compensate dynamically for the transistor threshold voltage allowing us to fix its operative point for prolonged tests (>10 h) with different aqueous solutions (Milli-Q water, NaCl 0. 1 M and a physiological solution). The presented real-time threshold voltage compensation does not only allow to steady EGOFETs DC output current, but it also preserves EGOFETs sensing capability for the detection of signals with frequencies as low as 1 Hz.
Ajuts:	Agencia Estatal de Investigación PID2019-111682RB-I00 Agencia Estatal de Investigación CEX2019-000917-S Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-918
Nota:	Altres ajuts: S. R. acknowledges her FPI fellowship and is enrolled in the UAB PhD program.
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Organic electronics ; Electrolyte-gated organic field-effect transistors ; Dual-gate ; EGOFETs ; Electrolyte gating ; Threshold voltage compensation
Publicat a:	Organic Electronics, Vol. 106 (July 2022) , art. 106531, ISSN 1566-1199

DOI: 10.1016/j.orgel.2022.106531

Postprint 28 p, 1.7 MB

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