Microstructure of VO2 Thin Films Synthesized by Pulsed Laser Deposition
Romanitan, Cosmin (National Institute for Research and Development in Microtechnologies)
Caicedo Roque, Jose Manuel (Institut Català de Nanociència i Nanotecnologia)
Pascu, Razvan (National Institute for Research and Development in Microtechnologies)
Mihalache, Iuliana (National Institute for Research and Development in Microtechnologies)
Gavrila, Raluca (National Institute for Research and Development in Microtechnologies)
Stoian, Marius (National Institute for Research and Development in Microtechnologies)
Djourelov, Nikolay (Horia Hulubei National R&D Institute for Physics and Nuclear Engineering)
Padilla-Pantoja, Jessica (Institut Català de Nanociència i Nanotecnologia)

Data:	2024
Resum:	In this paper, pulsed laser deposition (PLD) at low partial oxygen pressure (∼ 10 mTorr) was used to obtain VO thin films. During the PLD, the deposition temperature and number of pulses were varied in order to obtain a good sample crystallinity. It was showed by atomic force microscopy (AFM) micrographs that the mean grain size increased from ∼ 40 nm to ∼ 90 nm at a variation of the deposition temperature from 400 C to 500 C. Further, by increasing of both substrate temperature and number of pulses, the mean grain size increases to 220 nm. According to the Rietveld refinement of the experimental X-ray diffraction (XRD) pattern, within the grain size increasing, the mean crystallite size increased from 14 nm to 22 nm, as well as a decreasing of the lattice strain from 0. 29% to 0. 20%. These dependencies further imply a decreasing of the dislocation density of 2. 3 to 0. 9 × 10 cm. At the same time, the optical band gap decreased from 0. 72 eV (400 C) to 0. 66 eV (500 C), reaching 0. 60 eV (600 C). Further investigations performed by X-ray photoelectron spectroscopy (XPS) showed the vanadium oxide presence, by the spin-orbit splitting of approximately 7. 5 eV between V 2p and V 2p orbitals. Finally, the electrical measurements done in the range of 250 - 370 K reveal a close relationship between the dislocation density and the observed resistance-temperature dependence.
Ajuts:	European Commission 101007417
Drets:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Publicat a:	Romanian Journal of Information Science and Technology, Vol. 27, Num. 2 (2024) , p. 229-240, ISSN 1453-8245

DOI: 10.59277/ROMJIST.2024.2.09

12 p, 1.2 MB

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