Interface Engineering in All-Oxide Photovoltaic Devices Based on Photoferroelectric BiFeCoO Thin Films
Machado, Pamela (Institut de Ciència de Materials de Barcelona)
Sallés Perramon, Pol (Institut de Ciència de Materials de Barcelona)
Frebel, Alexander (Technische Universität Darmstadt)
De Luca, Gabriele (Institut Català de Nanociència i Nanotecnologia)
Ros, Eloi (Universitat Politècnica de Catalunya)
Hagendorf, Christian (Fraunhofer Center for Silicon-Photovoltaics, CSP)
Fina, Ignasi (Institut de Ciència de Materials de Barcelona)
Puigdollers, Joaquim (Universitat Politècnica de Catalunya)
Coll, Mariona (Institut de Ciència de Materials de Barcelona)

Fecha:	2024
Resumen:	Photoferroelectric BiFeO (BFO) has attracted renewed interest to be integrated into thin film photovoltaic (PV) devices as a stable, lead-free, and versatile photoabsorber with simplified architecture. While significant efforts have been dedicated toward the exploration of strategies to tailor the properties of this photoabsorber to improve the device performance, efficiencies still remain low. The modification of the BFO interface by the incorporation of transport-selective layers can offer fresh opportunities to modify the properties of the device. Identifying an optical and electrically suitable selective layer while ensuring easy device processing and controlled film properties is challenging. In this work, we determine the influence of incorporating a ZnO layer on the ferroelectric and photoresponse behavior of an epitaxial BiFeCoO (BFCO)-based heterostructure. The device is completed with Sn-doped InO (ITO) and LaSrMnO (LSMO) electrodes. This all-oxide system is stable under ambient conditions and displays robust ferroelectricity. The coupled ferroelectricity-photoresponse measurements demonstrate that the short circuit current can be modulated by ferroelectric polarization in up to 68% under blue monochromatic light. Also, the responsivity of the system with the ZnO-modified interface is larger than that of the system with no ZnO. Complementary band energy alignment studies reveal that the observed increase in the short circuit current density of the device with ZnO is attributed to lower Fermi level energy at the ZnO/BFCO interface compared to the ITO/BFCO interface, which reduces charge recombination. Therefore, this study provides useful insights into the role of the ZnO interface layer in stable BFO-based devices to further explore their viability for potential optoelectronic applications.
Ayudas:	Agencia Estatal de Investigación CEX2023-001263-S Agencia Estatal de Investigación PID2020-535114224RB-I00 Agencia Estatal de Investigación PID2019-536107727RB-I00 "la Caixa" Foundation LCF/BQ/DI19/11730026 Agencia Estatal de Investigación 114224RB-I00 Agencia Estatal de Investigación 107727RB-I00 Agencia Estatal de Investigación TED2021-130402B-I00 Agencia Estatal de Investigación TED2021-130453B-C21 Agencia Estatal de Investigación PRE2018-084618 Agencia Estatal de Investigación RYC2021-032524-I
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Materia:	Oxides ; Photoferroelectrics ; Thin films ; Interface ; BiFeO
Publicado en:	ACS applied electronic materials, Vol. 6, Num. 11 (November 2024) , p. 8251-8259, ISSN 2637-6113

DOI: 10.1021/acsaelm.4c01533
PMID: 39619126

9 p, 5.5 MB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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