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| Página principal > Artículos > Artículos publicados > Spin-Orbit Torques and Magnetization Switching in (Bi,Sb)2Te3/Fe3GeTe2 Heterostructures Grown by Molecular Beam Epitaxy |
| Fecha: | 2024 |
| Resumen: | Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and a broad distribution of SOT magnitudes. In this work, we present a scalable approach to grow a full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining the charge-compensated TI (Bi,Sb)Te with 2D FM FeGeTe (FGT). Harmonic magnetotransport measurements reveal that the SOT efficiency exhibits a non-monotonic temperature dependence and experiences a substantial enhancement with a reduction of the FGT thickness to 2 monolayers. Our study further demonstrates that the magnetization of ultrathin FGT films can be switched with a current density of J ∼ 10 A/m, with minimal device-to-device variations compared to previous investigations involving traditional FMs. |
| Ayudas: | European Commission 881603 Agencia Estatal de Investigación PID2019-111773RB-I00 Agencia Estatal de Investigación PCI2021-122035-2A Agencia Estatal de Investigación PID2022-143162OB-I00 Agencia Estatal de Investigación CEX2021-001214-S European Commission 754510 European Commission 840588 Agencia Estatal de Investigación RYC2019-028368-I |
| Derechos: | Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets. |
| Lengua: | Anglès |
| Documento: | Article ; recerca ; Versió acceptada per publicar |
| Publicado en: | Nano letters, Vol. 24, Issue 3 (January 2024) , p. 822-828, ISSN 1530-6992 |
Postprint 6 p, 961.9 KB |