Analog control of La0.5Sr0.5FeO3-δ electrical properties through oxygen deficiency induced magnetic transition
Nizet, Paul (Institut de Recerca en Energia de Catalunya)
Chiabrera, Francesco Maria (Institut de Recerca en Energia de Catalunya)
López-Pintó, Nicolau (Universitat Autònoma de Barcelona. Departament de Física)
Alayo Bueno, Nerea (Institut de Recerca en Energia de Catalunya)
Langner, Philipp (Institut de Recerca en Energia de Catalunya)
Valencia, Sergio (Helmholtz-Zentrum Berlin für Materialien und Energie)
Fraile Rodríguez, Arantxa (Universitat de Barcelona. Departament de Física de la Matèria Condensada)
Baiutti, Federico (Institut de Recerca en Energia de Catalunya)
Smekhova, Alevtina (Helmholtz-Zentrum Berlin für Materialien und Energie)
Morata, Alex (Institut de Recerca en Energia de Catalunya)
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Tarancón Rubio, Albert (Institut de Recerca en Energia de Catalunya)

Date:	2024
Abstract:	Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays. One of the most exciting approaches to modulate materials performance is mobile ion/vacancy insertion for inducing changes in relevant electrical, optical, or magnetic properties, among others. Unveiling the interplay between changes in the concentration of mobile defects (like oxygen vacancies) and functional properties in relevant materials represents a step forward for underpinning the emerging oxide iontronics discipline. In this work, electrochemical oxide-ion solid-state pumping cells were fabricated for analog control of the oxygen stoichiometry in thin films of mixed ionic-electronic conductor La0. 5Sr0. 5FeO3-δ. We demonstrate over more than four orders of magnitude electronic conductivity control at 50 °C within the same crystallographic phase through precise and continuous voltage control of the oxygen stoichiometry. We show that behind the modification of the transport properties of the material lays a paramagnetic-to-antiferromagnetic transition. We exploit such magnetoelectric coupling to show control over the exchange interaction between La0. 5Sr0. 5FeO3-δ and a ferromagnetic Co layer deposited on top.
Grants:	European Commission 840787 European Commission 824072 European Commission 101066321 European Commission 101017709 European Commission 101107093 European Commission 101054687 Agencia Estatal de Investigación PID2020-116844RB-C21 Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00750 Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00651
Rights:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Exchange interactions ; Crystallographic defects ; Magnetism ; Electrical conductor ; Transport properties ; Electrical properties and parameters ; Transistors ; Thin films ; Chemical elements ; Stoichiometry
Published in:	Applied physics reviews, Vol. 11, issue 4 (December 2024) , p. 041426, ISSN 1931-9401

DOI: 10.1063/5.0234003

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