A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level
Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla)
Diaz-Fortuny, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla)
Roca, Elisenda (Instituto de Microelectrónica de Sevilla)
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla)

Date:	2020
Abstract:	In the past few years, Time-Dependent Variability has become a subject of growing concern in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot-Carrier Injection and Random Telegraph Noise can largely affect circuit reliability. It becomes therefore imperative to develop reliability-aware design tools to mitigate their impact on circuits. To this end, these phenomena must be first accurately characterized and modeled. And, since all these phenomena reveal a stochastic nature for deeply-scaled integration technologies, they must be characterized massively on devices to extract the probability distribution functions associated to their characteristic parameters. In this work, a complete methodology to characterize these phenomena experimentally, and then extract the necessary parameters to construct a Time-Dependent Variability model, is presented. This model can be used by a reliability simulator.
Grants:	Agencia Estatal de Investigación TEC201675151-C3-R Agencia Estatal de Investigación BES2017-080160
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Bias temperature instability ; BTI ; Characterization ; CMOS ; HCI ; Hot-carrier injection ; Random telegraph noise ; Reliability ; RTN ; Simulation ; TDV ; Time-dependent variability
Published in:	Integration, Vol. 72 (May 2020) , p. 13-20, ISSN 0167-9260

DOI: 10.1016/j.vlsi.2020.02.002

Postprint 11 p, 2.3 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles