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Scaling theory put into practice : first-principles modeling of transport in doped silicon nanowires / Markussen, Troels (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Rurali, Riccardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jauho, Antti-Pekka (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; American Physical Society
We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires by computing the mean free path, sample-averaged conductance ⟨G⟩, and sample-to-sample variations std(G) as a function of energy, doping density, wire length, and the radial dopant profile. [...]
2007 - DOI (Digital Object Identifier)

10.1103/PhysRevLett.99.076803
Physical review letters, Vol. 99, Issue 7 (August 2007) , p. 76803

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