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Resultats globals: 4 registres trobats en 0.02 segons.
Articles, 4 registres trobats
Articles 4 registres trobats  
1.
10 p, 3.2 MB Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures / Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Oksenberg, Eitan (Weizmann Institute of Science (Israel). Department of Molecular Chemistry and Materials Science) ; Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ; Borja, Carla (Institut Català de Nanociència i Nanotecnologia) ; Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ; Di Giulio, Valerio (Institut de Ciències Fotòniques) ; Ramasse, Quentin (University of Leeds. School of Chemical and Process Engineering) ; García de Abajo, F. Javier (Institució Catalana de Recerca i Estudis Avançats) ; Joselevich, Ernesto (Weizmann Institute of Science (Israel). Department of Molecular Chemistry and Materials Science) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key role in determining their morphologies, crystal structure and properties. To unveil those mechanisms, we perform atomic-scale aberration-corrected scanning transmission electron microscopy studies on planar core-shell ZnSe@ZnTe nanowires on α-AlO substrates. [...]
2022 - 10.1038/s41467-022-31778-3
Nature communications, Vol. 13 (2022) , art. 4089  
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2.
8 p, 1.5 MB 3D ordering at the liquid-solid polar interface of nanowires / Zamani, Mahdi (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Imbalzano, Giulio (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Tappy, Nicolas (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Alexander, Duncan T. L. (École Polytechnique Fédérale de Lausanne. Institute of Physics) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Ramasse, Quentin (University of Leeds. School of Physics and Astronomy) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Bienvenue, Sebastien (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Hébert, Cécile (École Polytechnique Fédérale de Lausanne. Institute of Physics) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Ceriotti, Michele (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials)
The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic thermodynamics, neglecting the atomistic nature of the liquid-solid interface. [...]
2020 - 10.1002/adma.202001030
Advanced materials, Vol. 32, issue 38 (Sep. 2020) , art. 2001030  
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3.
10 p, 3.8 MB GaAs nanoscale membranes : prospects for seamless integration of III-Vs on silicon / Raya, Andrés M. (Instituto de Micro y Nanotecnología) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Dubrovskii, Vladimir G. (ITMO University) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Alén, Benito (Instituto de Micro y Nanotecnología) ; Morgan, Nicholas (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Ramasse, Quentin (University of Leeds. School of Physics) ; Fuster, David (Instituto de Micro y Nanotecnología) ; Llorens, José M. (Instituto de Micro y Nanotecnología) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Institute of Physics)
The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. [...]
2020 - 10.1039/c9nr08453c
Nanoscale, Vol. 12, issue 2 (2020) , p. 815-824  
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4.
12 p, 8.1 MB Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction / He, Yongmin (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Tang, PengYi (Institut Català de Nanociència i Nanotecnologia) ; Hu, Zhili (Rice University. Department of Materials Science and NanoEngineering (USA)) ; He, Qiyuan (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Zhu, Chao (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Wang, Luqing (Rice University. Department of Materials Science and NanoEngineering (USA)) ; Zeng, Qingsheng (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Golani, Prafful (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Gao, Guanhui (Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund (Germany)) ; Fu, Wei (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Huang, Zhiqi (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Gao, Caitian (Nanyang Technological University. Centre for Micro-/Nano-electronics (Singapore)) ; Xia, Juan (University of Electronic Science and Technology of China. Institute of Fundamental and Frontier Sciences (China)) ; Wang, Xingli (Nanyang Technological University. CNRS-International-NTU-THALES Research Alliance (Singapore)) ; Wang, Xuewen (Northwestern Polytechnical University. Institute of Flexible Electronics (China)) ; Zhu, Chao (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Ramasse, Quentin (University of Leeds. School of Chemical and Process Engineering (UK)) ; Zhang, Ao (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; An, Boxing (Beijing University of Technology. College of Materials Science and Engineering (China)) ; Zhang, Yongzhe (Beijing University of Technology. College of Materials Science and Engineering (China) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Morante, Joan Ramon (Institut de Recerca en Energia de Catalunya) ; Wang, Liang (Shanghai University. School of Environmental and Chemical Engineering (China)) ; Tay, Beng Kang (Nanyang Technological University. CNRS-International-NTU-THALES Research Alliance (Singapore)) ; Yakobson, Boris I. (Rice University. Department of Materials Science and NanoEngineering (USA)) ; Trampert, Achim (Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin Hausvogteiplatz (Germany)) ; Zhang, Hua (City University of Hong Kong. Department of Chemistry (China)) ; Wu, Minghong (Shanghai University. School of Environmental and Chemical Engineering (China)) ; Wang, Qi Jie (Nanyang Technological University. Center for OptoElectronics and Biophotonics (Singapore)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Liu, Zheng (Environmental Chemistry and Materials Centre. Nanyang Environment and Water Research Institute (Singapore))
Atom-thin transition metal dichalcogenides (TMDs) have emerged as fascinating materials and key structures for electrocatalysis. So far, their edges, dopant heteroatoms and defects have been intensively explored as active sites for the hydrogen evolution reaction (HER) to split water. [...]
2020 - 10.1038/s41467-019-13631-2
Nature communications, Vol. 11 (January 2020) , art. 57  
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