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Resultats globals: 4 registres trobats en 0.02 segons.
Articles, 4 registres trobats
Articles 4 registres trobats  
1.
9 p, 2.5 MB Hard superconducting gap in germanium / Tosato, Alberto (Delft University of Technology) ; Levajac, Vukan (Delft University of Technology) ; Wang, Ji-Yin (Delft University of Technology) ; Boor, Casper J. (Delft University of Technology) ; Borsoi, Francesco (Delft University of Technology) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Borja, Carla (Institut Català de Nanociència i Nanotecnologia) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sammak, Amir (QuTech and Netherlands Organisation for Applied Scientific Research) ; Veldhorst, Menno (Delft University of Technology) ; Scappucci, Giordano (Delft University of Technology)
The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered by the difficulty in obtaining a superconducting hard gap, that is, a gap free of subgap states. [...]
2023 - 10.1038/s43246-023-00351-w
Communications Materials, Vol. 4 (April 2023) , art. 23  
Registre complet - Creative Commons
2.
9 p, 1.1 MB Reducing charge noise in quantum dots by using thin silicon quantum wells / Paquelet Wuetz, Brian (Delft University of Technology) ; Degli Esposti, Davide (Delft University of Technology) ; Zwerver, Anne-Marije J. (Delft University of Technology) ; Amitonov, Sergey V. (QuTech and Netherlands Organisation for Applied Scientific Research) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Vandersypen, Lieven M. K. (Delft University of Technology) ; Russ, Maximilian (Delft University of Technology) ; Scappucci, Giordano (Delft University of Technology)
Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. [...]
2023 - 10.1038/s41467-023-36951-w
Nature communications, Vol. 14 (March 2023) , art. 1385  
Registre complet - Creative Commons
3.
1 p, 265.8 KB Author Correction : Reducing charge noise in quantum dots by using thin silicon quantum wells / Paquelet Wuetz, Brian (Delft University of Technology) ; Degli Esposti, Davide (Delft University of Technology) ; Zwerver, Anne-Marije J. (Delft University of Technology) ; Amitonov, Sergey V. (QuTech and Netherlands Organisation for Applied Scientific Research) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (QuTech and Netherlands Organisation for Applied Scientific Research) ; Sammak, Amir (QuTech and Netherlands Organisation for Applied Scientific Research) ; Vandersypen, Lieven M. K. (Delft University of Technology) ; Russ, Maximilian (Delft University of Technology) ; Scappucci, Giordano (Delft University of Technology)
The original version of this Article omitted fromthe author list the author Amir Sammakwho is from the 'QuTech and Netherlands Organisation for Applied Scientific Research (TNO), Delft, The Netherlands'. [...]
2023 - 10.1038/s41467-023-37548-z
Nature communications, Vol. 14 (April 2023) , art. 1921  
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4.
12 p, 7.5 MB Enhancement of proximity-induced superconductivity in a planar Ge hole gas / Aggarwal, Kushagra (Institute of Science and Technology Austria) ; Hofmann, Andrea (Institute of Science and Technology Austria) ; Jirovec, D (Institute of Science and Technology Austria) ; Prieto, Ivan (Institute of Science and Technology Austria) ; Sammak, Amir (QuTech and Netherlands Organisation for Applied Scientific Research) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Veldhorst, Menno (QuTech and Kavli Institute of Nanoscience) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Scappucci, Giordano (QuTech and Kavli Institute of Nanoscience) ; Danon, Jeroen (Norwegian University of Science and Technology. Department of Physics) ; Katsaros, Georgios (Institute of Science and Technology Austria)
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. [...]
2021 - 10.1103/PhysRevResearch.3.L022005
Physical Review Research, Vol. 3, issue 2 (April-June 2021) , art. L022005  
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